Parameter extraction for small‐signal model of <scp>GaN HEMTs</scp> on <scp>SiC</scp> substrates based on modified firefly algorithm-Reference-Cited by-同舟云学术

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Parameter extraction for small‐signal model of GaN HEMTs on SiC substrates based on modified firefly algorithm

Published:2022-10-22 Issue:12 Volume:32 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Mic Comp-Aid Eng

Author:

Liu Yuan¹,Cao Fengrui²,Xiong Xiaoming¹,Huang Junkai²,Deng Wanling²

Affiliation:

1. School of Integrated Circuits Guangdong University of Technology Guangzhou China

2. Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Department of Electronic Engineering Jinan University Guangzhou China

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.23518

Reference35 articles.

1. An Explicit Surface Potential Calculation and Compact Current Model for AlGaN/GaN HEMTs

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

4. A compact drain current model for heterostructure HEMTs including 2DEG density solution with two subbands

5. An improved GaN P‐HEMT small‐signal equivalent circuit with its parameter extraction;Zhang J;Micro J,2021

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accurate, Efficient and Reliable Small-Signal Modeling Approaches for GaN HEMTs;IEEE Access;2023

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