Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential Method-Reference-Cited by-同舟云学术

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Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential Method

Published:1970 Issue:2 Volume:37 Page:709-719
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Junginger H.-g.,van Haeringen W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Energy Band Structure of the Carborundum SiC Crystal

2. Calculation of the Energy Band Structure of the β-SiC Crystal by the Orthogonalized Plane Wave Method

3. Electronic Band Structure of Group IV Elements and of III-V Compounds

4. Empirical pseudopotential approach to the band structures of diamond and silicon carbide

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1. Wade Bandgap Semiconductor and Photonic Crystals;Graduate Texts in Physics;2023

2. Generation of empirical pseudopotentials for transport applications and their application to group IV materials;Journal of Applied Physics;2020-07-21

3. Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model;Journal of Theoretical and Applied Physics;2019-02-28

4. Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES;Applied Physics Letters;2017-03-27

5. General Properties of Bulk SiC;Engineering Materials and Processes;2014

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