Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES-Reference-Cited by-同舟云学术

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Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES

Published:2017-03-27 Issue:13 Volume:110 Page:132101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Woerle J.¹²,Bisti F.¹,Husanu M.-A.¹³,Strocov V. N.¹,Schneider C. W.¹^ORCID,Sigg H.¹,Gobrecht J.¹,Grossner U.²^ORCID,Camarda M.¹

Affiliation:

1. Paul Scherrer Institut, 5232 Villigen, Switzerland

2. Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland

3. National Institute of Materials Physics, Atomistilor 105 bis, 077125 Bucharest-Magurele, Romania

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979102

Reference23 articles.

1. Dielectric strength of thermal oxides on 6H‐SiC and 4H‐SiC

2. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001̄) face

3. Fundamentals of Silicon Carbide Technology

4. Periodic Oscillations of the Frequency-Dependent Photoelectric Cross Sections of Surface States: Theory and Experiment

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3. Determination of the embedded electronic states at nanoscale interface via surface-sensitive photoemission spectroscopy;Light: Science & Applications;2021-07-27

4. Effects of nitridation on SiC/SiO2 structures studied by hard X-ray photoelectron spectroscopy;Journal of Physics: Energy;2020-05-27

5. k-resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES;Journal of Electron Spectroscopy and Related Phenomena;2019-10

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