The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy

Published:2011-08-16 Issue:4 Volume:44 Page:395-398
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Yu T.¹²,Jin C. G.¹²,Yang X. M.¹²,Wu X. M.¹²³,Zhuge L. J.⁴²,Ge S. B.¹²

Affiliation:

1. Department of Physics; Soochow University; Suzhou 215006 China

2. The Key Laboratory of Thin Films of Jiangsu; Soochow University; Suzhou 215006 China

3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; 865 Changning Road Shanghai 200050 China

4. Analysis and Testing Center; Soochow University; Suzhou 215006 China

Funder

National Natural Science Foundation of China

Open Project of State Key Laboratory of Functional Materials for Information and Qing Lan Project

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.3815/fullpdf

Reference31 articles.

1. Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

2. Comparative study of the interfacial characteristics of sputter-deposited HfO2 on native SiO2/Si (100) usingin situ XPS, AES and GIXR

3. HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

4. Control of interfacial silicate between HfO2 and Si by high concentration ozone

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2. Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1−xTaxO high-k film prepared by dual ion beam sputtering deposition;Vacuum;2013-06