57.1: High-Performance Poly-Si TFTs Using Pressure-Induced Nucleation Technology-Reference-Cited by-同舟云学术

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57.1: High-Performance Poly-Si TFTs Using Pressure-Induced Nucleation Technology

Published:2015-06 Issue:1 Volume:46 Page:850-852
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Kang Myung-Koo¹,Kim Si Joon²³,Kim Hyun Jae³

Affiliation:

1. Samsung Electronics Co., Ltd., Yongin-City, Gyeonggi-Do, Republic of Korea

2. Samsung Display Co., Ltd., Asan-City, Chungcheongnam-Do, Republic of Korea

3. School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea

Publisher

Wiley

Reference4 articles.

1. A multi-channel structure to enhance the performance of sequential lateral solidification thin-film transistor;Kang;Appl. Phys. Lett.,2010

2. Improved uniformity of sequential lateral solidification thin-film transistors;Kang;IEEE Electron Device Lett.,2011

3. Formation of silicon nanoparticles by a pressure induced nucleation mechanism;Kang;Nanoscale,2013

4. Fabrication of high performance thin-film transistors via pressure-induced nucleation;Kang;Scientific Reports,2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trial Manufacturing of Thin-Film Transistor by Selective Laser Annealing with Micro Lens;The Review of Laser Engineering;2016

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