Angular Dependence of Si3 N4 Etching in C4 F6 /CH2 F2 /O2 /Ar Plasmas-Reference-Cited by-同舟云学术

Angular Dependence of Si3 N4 Etching in C4 F6 /CH2 F2 /O2 /Ar Plasmas

Published:2017-11-07 Issue:12 Volume:40 Page:2251-2256
ISSN:0930-7516
Container-title:Chemical Engineering & Technology
language:en
Short-container-title:Chem. Eng. Technol.

Author:

Kim Jun-Hyun¹,Cho Sung-Woon¹,Kim Chang-Koo¹

Affiliation:

1. Ajou University; Department of Chemical Engineering and Department of Energy Systems Research; Worldcup-ro 206, Woncheon-dong, Yeontong-gu 16499 Suwon Korea

Funder

National Research Foundation of Korea

GRRC program of Gyeonggi province

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Reference18 articles.

1. Selective reactive ion etching of silicon nitride over silicon using CHF3 with N2 addition

2. Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride

3. Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

4. Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

5. Influence of polymer formation on the angular dependence of reactive ion beam etching

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling Bowing and Narrowing in SiO2 Contact-Hole Etch Profiles Using Heptafluoropropyl Methyl Ether as an Etchant with Low Global Warming Potential;Coatings;2023-08-17

2. Plasma etching of SiO2 contact hole using perfluoropropyl vinyl ether and perfluoroisopropyl vinyl ether;Korean Journal of Chemical Engineering;2022-01

3. Optical and Electrical Characteristics of Fluorocarbon Films Deposited in a High-Density C₄F₈ Plasma;KOREAN CHEM ENG RES;2021

4. Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas;Korean Journal of Chemical Engineering;2020-01-30

5. Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether;Thin Solid Films;2019-01