Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes-Reference-Cited by-同舟云学术

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Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

Published:2001 Issue:4 Volume:14 Page:331-343
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Burov L. I.,Gribkovskii V. P.,Grigelevich P. S.,Kramar M. I.,Ryabtsev G. I.,Shore K. A.,Voitikov S. V.,Kragler R.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference23 articles.

1. Long-Wavelength Semiconductor Lasers. Van Nostrand Reinhold: New York, 1986.

2. Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers

3. Determination of the wavelength dependence of Auger recombination in long-wavelength quantum-well semiconductor lasers using hydrostatic pressure

4. Trapped radiation in injection lasers

5. Injection lasers

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1. Dynamics of polarization switching in single-mode injection semiconductor lasers;Journal of Applied Spectroscopy;2010-03

2. Temperature-Dependent Saturation Characteristics of Injection Seeded Fabry–PÉrot Laser Diodes/Reflective Optical Amplifiers;Journal of Lightwave Technology;2010-02

3. Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure;Applied Physics B;2008-01-22

4. Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers;physica status solidi (c);2002-12-19

5. Amplified luminescence and threshold current temperature dependencies of ZnSe and GaN laser diodes;Applied Physics B;2002-07

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