On wafer-scaled GaAs HEMTs: Direct and robust small signal modeling up to 50 GHz-Reference-Cited by-同舟云学术

On wafer-scaled GaAs HEMTs: Direct and robust small signal modeling up to 50 GHz

Published:2009-05-13 Issue:8 Volume:51 Page:1958-1963
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Caddemi Alina,Crupi Giovanni,Macchiarella Alessio

Funder

“IMT-ARSEL” project prot. RBIP06R9X5

Italian MIUR

“CMOGAN” project through the contribution of the Italian Ministero degli Affari Esteri, Direzione Generale per la Promozione e la Cooperazione Culturale

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.24492/fullpdf

Reference13 articles.

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2. Two-dimensional electron gas MESFET structure;Delagebeaudeuf;Electron Lett,1980

3. Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs;Caddemi;Microelectron Reliab,2006

4. On the small signal modeling of advanced microwave FETs: A comparative study;Crupi;Int J RF Microwave Comput Aided Eng,2008

5. A new millimeter wave small-signal modeling approach for pHEMTs accounting for the output conductance time delay;Crupi;IEEE Trans Microwave Theory Tech,2008

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