Affiliation:
1. Key Laboratory of Organosilicon Chemistry and Materials Technology of Ministry of Education College of Material Chemistry and Chemical Engineering Hangzhou Normal University Hangzhou 311121 P.R. China
2. School of engineering Hangzhou Normal University Hangzhou 311121 P.R. China
Abstract
AbstractThis study provides a comprehensive overview of the preparation methods for polyhedral oligomeric silsesquioxane (POSS) monomers and polymer/POSS nanocomposites. It focuses on the latest advancements in using POSS to design polymer nanocomposites with reduced dielectric constants. The study emphasizes exploring the potential of POSS, either alone or in combination with other materials, to decrease the dielectric constant and dielectric loss of various polymers, including polyimides, bismaleimide resins, poly(aryl ether)s, polybenzoxazines, benzocyclobutene resins, polyolefins, cyanate ester resins, and epoxy resins. In addition, the research investigates the impact of incorporating POSS on improving the thermal properties, mechanical properties, surface properties, and other aspects of these polymers. The entire study is divided into two parts, discussing systematically the role of POSS in reducing dielectric constants during the preparation of POSS composites using both physical blending and chemical synthesis methods. The goal of this research is to provide valuable strategies for designing a new generation of low dielectric constant materials suitable for large‐scale integrated circuits in the semiconductor materials domain.
Funder
Natural Science Foundation of Zhejiang Province
National Basic Research Program of China
National Natural Science Foundation of China
Cited by
3 articles.
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