Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor-Reference-Cited by-同舟云学术

Atomic Hydrogen Induced Chemical Vapor Deposition of Silicon Oxycarbide Thin Films Derived from Diethoxymethylsilane Precursor

Published:2020-06-08 Issue:8 Volume:34 Page:
ISSN:0268-2605
Container-title:Applied Organometallic Chemistry
language:en
Short-container-title:Appl Organomet Chem

Author:

Uznanski Pawel¹^ORCID,Walkiewicz‐Pietrzykowska Agnieszka¹,Jankowski Krzysztof¹²,Zakrzewska Joanna¹,Wrobel Aleksander M.¹,Balcerzak Jacek³,Tyczkowski Jacek³

Affiliation:

1. Polish Academy of Sciences Centre of Molecular and Macromolecular Studies Sienkiewicza 112 Lodz 90‐363 Poland

2. Technical Department Jacob of Paradies University Chopina 52 Gorzow Wielkopolski 66‐400 Poland

3. Faculty of Process and Environmental Engineering, Department of Molecular Engineering Lodz University of Technology Wolczanska 213 Lodz 90‐924 Poland

Publisher

Wiley

Subject

Inorganic Chemistry,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aoc.5674

Reference65 articles.

1. High Thermo-Optic Coefficient of Silicon Oxycarbide Photonic Waveguides

2. The origin of white luminescence from silicon oxycarbide thin films

3. SiOCH thin films deposited by chemical vapor deposition: From low-κ to chemical and biochemical sensors

4. A Solid-State Nuclear Magnetic Resonance Study of Post-Plasma Reactions in Organosilicone Microwave Plasma-Enhanced Chemical Vapor Deposition (PECVD) Coatings

5. Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

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