Effect of hydrogen flow rate on properties of silicon oxycarbide thin films via hot wire chemical vapor deposition

Abstract

AbstractThis study explores the impact of hydrogen flow as a carrier gas on silicon oxycarbide thin films produced via hot wire chemical vapor deposition (HWCVD) using tetraethyl orthosilicate as a precursor. Systematically varying the hydrogen flow rates, the influence on thin film composition, microstructure, and optical properties is investigated. Employing diverse characterization techniques, such as X‐ray diffraction, field‐emission scanning electron microscopy (FE‐SEM), energy‐dispersive X‐ray spectroscopy, Fourier‐transform infrared (FTIR), X‐ray photoelectron spectroscopy (XPS), ellipsometry, and photoluminescence (PL) spectroscopy, it is revealed that there is a correlation between hydrogen flow rate and thin film elemental composition. Higher hydrogen flow rates result in increased silicon content and reduced contributions of oxygen and carbon. FE‐SEM images show agglomerates with improved homogeneity at higher flow rates. FTIR spectra highlight distinctive vibrational modes, including Si–H bonds. XPS confirms the emergence of Si–H bonds at elevated hydrogen flow rates. Ellipsometry indicates increased thickness and refractive index. PL spectra exhibit a broadband across the visible spectrum, influenced by hydrogen‐related defects and electronic transitions. This study provides findings for optimizing HWCVD parameters to tailor thin films for specific applications, emphasizing the important role of hydrogen flow as a carrier gas.