Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing-Reference-Cited by-同舟云学术

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Published:2019-08-19 Issue:12 Volume:27 Page:1081-1091
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Lanterne Adeline¹²^ORCID,Desrues Thibaut¹²,Lorfeuvre Coralie¹²,Coig Marianne¹³,Torregrosa Frank⁴,Milési Frédéric¹³,Roux Laurent⁴,Dubois Sébastien¹²

Affiliation:

1. University Grenoble Alpes Grenoble F‐38000 France

2. CEA, Liten, INES 50 Avenue du Lac Léman Le Bourget‐du‐Lac 73375 France

3. CEA, Leti MINATEC Campus, 17 rue des Martyrs Grenoble 38054 France

4. IBS Rue Gaston Imbert Prolongée, Z.I. Rousset‐Peynier Peynier 13790 France

Funder

Fonds Unique Interministériel

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3186

Reference28 articles.

1. A Roadmap Toward 24% Efficient PERC Solar Cells in Industrial Mass Production

2. “International Technology Roadmap for Photovoltaic (ITRPV) 2016 results including maturity report ”www.itrpv.net no. September 2017.

3. Progress in the development of industrial nPERT cells

4. Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells

5. 20% Efficient Screen-Printed n-Type Solar Cells Using a Spin-On Source and Thermal Oxide/Silicon Nitride Passivation

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