Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells-Reference-Cited by-同舟云学术

Process development and comparison of various boron emitter technologies for high-efficiency (~21%) n-type silicon solar cells

Published:2016-04-13 Issue:8 Volume:24 Page:1109-1115
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Ryu Kyungsun¹,Cho Eunhwan¹,Rohatgi Ajeet¹²,Ok Young-Woo¹

Affiliation:

1. University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer Engineering; Georgia Institute of Technology; Atlanta GA 30332 USA

2. Suniva Inc.; 5765 Peachtree Industrial Blvd. Norcross GA 30092 USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

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2. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;Journal of Applied Physics,2001

3. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004

4. 20% Efficient screen-printed n-type solar cells using a spin-on source and thermal oxide/silicon nitride passivation;Das;IEEE Journal of Photovoltaics,2011

5. 19.4 Efficient bifacial solar cell with spin-on boron diffusion;Barth;Energy Procedia,2013

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