High‐Performance and High‐Endurance HfO 2 ‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel-Reference-Cited by-同舟云学术

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High‐Performance and High‐Endurance HfO 2 ‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel

Published:2021-04-04 Issue:5 Volume:15 Page:2100018
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Kim Taeho¹,Hwang Junghyeon¹,Kim Giuk¹,Jung Minhyun¹,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Yuseong-gu Daejeon 34141 Republic of Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100018

Reference39 articles.

1. M.Trentzsch S.Flachowsky R.Richter J.Paul B.Reimer D.Utess S.Jansen H.Mulaosmanovic S.Müller S.Slesazeck J.Ocker M.Noack J.Müller P.Polakowski J.Schreiter S.Beyer T.Mikolajick B.Rice in2016 IEEE Int. Electron Devices Meeting (IEDM) IEEE Piscataway NJ USA2016 https://doi.org/10.1109/IEDM.2016.7838397.

2. J.Müller E.Yurchuk T.Schlösser J.Paul R.Hoffmann S.Müller D.Martin S.Slesazeck P.Polakowski J.Sundqvist M.Czernohorsky K.Seidel P.Kücher R.Boschke M.Trentzsch K.Gebauer U.Schröder T.Mikolajick in2012 Symp. on VLSI Technology (VLSIT) IEEE Piscataway NJ USA2012 pp.25–26 https://doi.org/10.1109/VLSIT.2012.6242443.

3. Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance

4. H.Mulaosmanovic J.Ocker S.Müller M.Noack J.Müller P.Polakowski T.Mikolajick S.Slesazeck in2017 Symp. on VLSI Technology IEEE Piscataway NJ USA2017 https://doi.org/10.23919/VLSIT.2017.7998165.

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