Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies
Author:
Affiliation:
1. Hunan Key Laboratory of Micro-Nano Energy Materials and Devices Xiangtan University Xiangtan Hunan 411105 P. R. China
2. School of Physics and Optoelectronics Xiangtan University Xiangtan Hunan 411105 P. R. China
Funder
National Natural Science Foundation of China
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000395
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