Affiliation:
1. Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo Zhejiang 315211 China
2. Laboratory of Advanced Nano Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China
3. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China
Abstract
In this work, nitrogen‐doped zinc‐tin‐oxygen (ZnSnO:N) optoelectronic synaptic thin film transistors (TFTs) with superior visible light response are fabricated. Nitrogen doping narrows the bandgap of ZnSnO, which in turn broadens the absorption spectrum. Additionally, the reduction of non‐radiative centers in the channel layer prolongs the lifetime of the photogenerated electrons, resulting in enhancements to the photo response throughout the visible region. Optoelectronic synaptic devices based on ZnSnO:N TFTs can accurately replicate synaptic behaviors, including short‐term plasticity (STP) and long‐term plasticity (LTP). Furthermore, the ZnSnO:N optoelectronic synaptic TFT‐based array has the potential to improve image contrast. The ZnSnO:N TFT exhibits a considerable improvement in both visible light photosensitivity and synaptic plasticity.
Funder
Natural Science Foundation of Zhejiang Province
Ningbo Natural Science Foundation
National Natural Science Foundation of China
Cited by
1 articles.
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