Temperature, Bias, Angle, and Thickness‐Dependent Magnetoresistance in a Vertical Spin Valve Structure CoFe/TiO <sub>2</sub> /CoFe-Reference-Cited by-同舟云学术

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Temperature, Bias, Angle, and Thickness‐Dependent Magnetoresistance in a Vertical Spin Valve Structure CoFe/TiO ₂ /CoFe

Published:2022-10-19 Issue:2 Volume:17 Page:2200212
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Elahi Ehsan¹^ORCID,Dastgeer Ghulam¹,Sharma Pradeep Raj²,Chavan Vijay D.³,Noh Hwayong¹

Affiliation:

1. Department of Physics & Astronomy Sejong University 209 Neungdong-ro, Gwangjin-Gu Seoul 05006 South Korea

2. Department of Materials Science & Engineering Yonsei University Seoul 03722 South Korea

3. Department of Electronic Engineering Sejong University 209 Neungdong-ro, Gwangjin-Gu Seoul 05006 South Korea

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200212

Reference47 articles.

1. Magnetic tunnel junctions

2. Proposal for an all-spin logic device with built-in memory

3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

4. 80% tunneling magnetoresistance at room temperature for thin Al–O barrier magnetic tunnel junction with CoFeB as free and reference layers

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1. Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions;New Journal of Physics;2024-03-01

2. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics;Nanoscale;2024

3. Recent innovations in 2D magnetic materials and their potential applications in the modern era;Materials Today;2023-11

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