Affiliation:
1. Hunan Key Laboratory of Nanophotonics and Devices Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha Hunan 410083 P. R. China
Abstract
Neuromorphic devices emulating the brain functionality have achieved a substantial scientific leap in the last decade. Among them, neuromorphic vertical transistors have attracted extensive interests due to their abilities of mitigating physical channel‐length limitations and developing new‐generation 3D integrated electronics. In this review, the recent advances and major trends in the field of emerging neuromorphic devices based on vertical transistor are focused on. It has been started with a brief introduction of biological nervous system and neuromorphic behaviors. Next, the latest advances in the development of vertical transistor and shed light on bio‐related neuromorphic applications are discussed. They are discussed in detail from the aspects of materials and potential applications. Finally, future research challenges in neuromorphic vertical transistor are briefly summarized, and their prospects are discussed.
Funder
National Natural Science Foundation of China
Subject
Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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