A Novel Insight into the Strain Effect of <i>T</i> <sub>2g</sub> Mode Splitting and Bandgap in Diamond-Reference-Cited by-同舟云学术

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A Novel Insight into the Strain Effect of T _2g Mode Splitting and Bandgap in Diamond

Published:2022-10-25 Issue:1 Volume:17 Page:2200344
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Liu Yonghui¹²^ORCID,Liu Sheng³⁴,Robertson John¹⁵,Guo Yuzheng¹^ORCID

Affiliation:

1. School of Electrical Engineering and Automation Wuhan University Wuhan 430072 China

2. College of Water Resources and Environmental Engineering East China University of Technology Nanchang 330013 China

3. Institute of Technological Sciences Wuhan University Wuhan 430072 China

4. School of Power and Mechanical Engineering and School of Microelectronics Wuhan University Wuhan 430072 China

5. Department of Engineering University of Cambridge Cambridge CB2 1PZ UK

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200344

Reference39 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Ultrawide bandgap semiconductors

3. Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

4. Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

5. Impact of carbon–carbon defects at the SiO2/4H-SiC (0001) interface: a first-principles calculation

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