Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films-Reference-Cited by-同舟云学术

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf 0.5 Zr 0.5 O 2 Films

Published:2021-03-14 Issue:5 Volume:15 Page:2100012
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Mittmann Terence¹^ORCID,Szyjka Thomas²^ORCID,Alex Hsain³,Istrate Marian Cosmin⁴^ORCID,Lomenzo Patrick D.¹^ORCID,Baumgarten Lutz²,Müller Martina⁵,Jones Jacob L.³,Pintilie Lucian⁴^ORCID,Mikolajick Thomas¹⁶^ORCID,Schroeder Uwe¹^ORCID

Affiliation:

1. NaMLab gGmbH Noethnitzer Str. 64a 01187 Dresden Germany

2. Peter Grünberg Institut (PGI‐6) Forschungszentrum Jülich GmbH 52425 Jülich Germany

3. Department of Materials and Science and Engineering North Carolina State University Raleigh NC 27695 USA

4. National Institute of Materials Physics Magurele 077125 Romania

5. Fachbereich Physik Universität Konstanz 78464 Konstanz Germany

6. Chair of Nanoelectronic Materials TU Dresden 01062 Dresden Germany

Funder

Ministry of Education and Research, Romania

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100012

Reference47 articles.

1. Current status and challenges of ferroelectric memory devices

2. Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer

3. Ferroelectricity in hafnium oxide thin films

4. Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective

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