Affiliation:
1. Smart Power Technology R&D STMicroelectronics Agrate Brianza 20864 Italy
2. AGR FMT Physical Laboratory STMicroelectronics Agrate Brianza 20864 Italy
Abstract
Ge‐rich GST (GGST) alloys have been shown to fulfill the tough temperature specifications required by automotive applications. Thus, they are the most promising materials for the embedded phase‐change memory market. In this respect, the characterization of the material properties once patterned and fully integrated is instrumental to improve the process and optimize the device performance. A description of the material behavior through a realistic sequence of process steps is still missing. Herein, a statistical‐based methodology capable to extract advanced metrics for the quantification of by‐process segregation beyond ternary systems is presented, capable to quantify thermal evolution of any out‐of‐stoichiometry and segregated material beyond ternary systems. The methodology to study the physical behavior of GGST as a function of a typical back‐end‐of‐line (BEOL) process is exploited, providing a further comparison between three different BEOL‐ended GGST.
Subject
Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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