20.7% efficient ion-implanted large arean-type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition-Reference-Cited by-同舟云学术

20.7% efficient ion-implanted large arean-type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

Published:2014-07-31 Issue:10 Volume:22 Page:1030-1039
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Tao Yuguo¹,Payne Adam²,Upadhyaya Vijaykumar D.¹,Rohatgi Ajeet¹²

Affiliation:

1. School of Electrical and Computer Engineering; Georgia Institute of Technology; 777 Atlantic Drive Atlanta GA 30332-0250 USA

2. Department of R&D; Suniva Inc.; 5765 Peachtree Industrial Blvd. Norcross GA 30092 USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference42 articles.

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3. High-throughput ion-implantation for low-cost high-efficiency silicon solar cells;Rohatgi;Energy Procedia,2012

4. Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon;Macdonald;Applied Physics Letters,2004

5. Minority carrier lifetime degradation in boron-doped Czochralski silicon;Glunz;Journal of Applied Physics,2001

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