Structural and nanomechanical properties of porous silicon: Cheap substrate for CMOS process industry-Reference-Cited by-同舟云学术

Structural and nanomechanical properties of porous silicon: Cheap substrate for CMOS process industry

Published:2020-10-04 Issue:12 Volume:52 Page:1055-1060
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf Interface Anal

Author:

Belaroussi Yasmina¹^ORCID,Scheen Gilles²,Saadi Abdelhalim A.³,Taibi Abdelkader¹,Maafri Djabar¹,Nysten Bernard⁴,Gabouze Noureddine⁵,Raskin Jean‐Pierre²

Affiliation:

1. Centre de Développement des Technologies Avancées Alger Algeria

2. ICTEAM Université catholique de Louvain Louvain‐la‐Neuve Belgium

3. NXP Semiconductors Toulouse France

4. IMCN/BSMA Université catholique de Louvain Louvain‐la‐Neuve Belgium

5. Centre de Recherche en Technologie des Semi‐conducteurs pour l'Energétique Alger Algeria

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sia.6885

Reference24 articles.

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3. Substrate transfer for RF technologies

4. RF Performance of a Commercial SOI Technology Transferred Onto a Passivated HR Silicon Substrate

5. Surface‐passivated high‐resistivity silicon substrates for RFICs;Rong B;IEEE Electron Device Lett,2004

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