A Multifunctional Flexible Ferroelectric Transistor Sensor Based on Si/Fe-Doped Indium Oxide for Electronic Skin

Abstract

As the sensing basis and data source of the new generation of information technology, sensors play a vital role in today’s information age. The purpose of this work is to construct a flexible ferroelectric field-effect transistor (FeFET) as a prototype for a multifunctional sensor for electronic skin. The FeFET device is fabricated from poly(vinylidene fluoride-dimethylsiloxane) (P(VDF-DMS)) and Si/Fe-doped indium oxide (SFIO). Furthermore, this device is capable of three-in-one sensing. Specifically, it can detect temperature changes from 0°C to 70°C and monitors external forces with a linear sensitivity of 4.6 nA·kPa-1 across a pressure range of 50 kPa to 150 kPa. Additionally, electrostatic interaction enables the gadget to detect the approach of a charged item. Furthermore, this gadget was built to detect physiological signals produced by the human body, such as pulse, respiration, and finger movements. It is very bend-resistant and retains transmission properties after 1200 cycles of bending. Moreover, we will examine the device’s sensitivity to temperature variations and charged particles when bent to a radius of 1.09 mm. This design will promote the next generation multifunctional E-skin.