Affiliation:
1. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan
Abstract
This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX+ ultraviolet (UV) illumination. An electron-beam evaporated Pr2O3insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD), in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH4)2SXsolution and UV illumination before the gate insulator (Pr2O3) is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH4)2SXpretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm) are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3and high-kAlGaN/GaN MIS-HEMTs, with P2S5/(NH4)2SX+ UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.
Funder
National Science Council, ROC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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