Resistivity Recovery of Thin Sputtered Aluminium Films

Author:

Tellier C. R.1,Tosser A. J.12

Affiliation:

1. Université de Haute-Normandie, Laboratoire d'Electronique et d'Automatique, U.E.R. des Sciences & Techniques B.P. 4006, Le Havre Cedex 76077, France

2. Université de Nancy. 1, Laboratoire d'Électronique, case officielle 140, Nancy Cedex 54037, France

Abstract

Aluminium films were r.f. sputtered onto vycor slides. Annealing induces a decrease of resistivity at temperatures between 300 K and 414 K. Isothermal resistance recovery occurs with a constant rate depending on the annealing temperature; the activation energy increases from 0.3 eV to 0.4 eV for increasing thickness. The resistivity recovery is attributed to a surface reordering phenomenon, which is in good agreement with the Mayadas–Shatzkes conduction occuring in these polycrystalline films, with a thickness independent mean grain diameter. Reflections on grain boundaries are independent of ageing, whereas the reflection coefficient on the upper surface is increased.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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