Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

Author:

Hu Ziyang1,Jiao Baochen1,Zhang Jianjun1,Zhang Xiaodan1,Zhao Ying1

Affiliation:

1. Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Institute of Photo-Electronic Thin Film Device and Technique of Nankai University, Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Tianjin 300071, China

Abstract

Indium-doped zinc oxide (IZO) thin films were prepared by low-cost ultrasonic spray pyrolysis (USP). Both a low resistivity (3.13×103Ω cm) and an average direct transmittance (4001500 nm) about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices based on poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

Funder

National Basic Research Program of China

Publisher

Hindawi Limited

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry

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