Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55) Thin Film on Silicon Substrate

Abstract

The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS). The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3)O3+ 0.94Pb(Zr0.45, Ti0.55)O3(0.06PMnN-0.94PZT(45/55)) were deposited on silicon(100) substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55) films were also deposited. The results show that both of thin films show polycrystal structures with the main (111) and (101) orientations. The transverse piezoelectric coefficients aree31,eff=−4.03 C/m2ande31,eff=-3.5 C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are2Ec=147.31 kV/cm and2Ec=135.44 kV/cm, and the saturation polarizationPs=30.86 μC/cm2andPs=17.74 μC/cm2, and the remnant polarizationPr=20.44 μC/cm2andPr=9.87 μC/cm2, respectively. Moreover, the dielectric constants and loss areεr=681andD=5% andεr=537andD=4.3%, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55) thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.