Crystallization Behavior and Thermal Analysis of CoFeB Thin Films

Author:

Tseng Jiun-Yi1,Chen Yuan-Tsung2,Chang Z. G.3,Wu C. W.3,Yang L. C.3

Affiliation:

1. Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan

2. Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin 64002, Taiwan

3. Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan

Abstract

We examined two targets containing Co40Fe40B20and Co60Fe20B20. We deposited Co40Fe40B20and Co60Fe20B20monolayer thin films of various thicknesses on glass substrates through DC magnetron sputtering; the thicknesses ranged from 25 to 200 Å. The thermal properties of the Co40Fe40B20and Co60Fe20B20thin films were determined using a differential scanning calorimeter (DSC). The thermal properties included the glass transition temperature (Tg), onset crystallization temperature (Tx), and glass-forming ability, which were determined according to these values. Using the Kissinger formula revealed that the activation energy of the Co60Fe20B20with a thickness of 75 Å is the highest, implying that crystallization was the lowest and the Co60Fe20B20film showed anticrystallization properties. However, the energy of 75 Å Co40Fe40B20thin films was the lowest, which is opposite to that of Co60Fe20B20. This observation can be reasonably explained based on the concentration of Co or Fe. Therefore, a thickness of 75 Å is critical.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Hindawi Limited

Subject

General Materials Science

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