SiGe HBTs Optimization for Wireless Power Amplifier Applications

Author:

Mans Pierre-Marie12,Jouan Sebastien1,Fregonese Sebastien2,Vandelle Benoit1,Pache Denis1,Arnaud Caroline1,Maneux Cristell2,Zimmer Thomas2

Affiliation:

1. STMicroelectronics, Group of Process Integration, 850 rue Jean Monnet, BP 16, 38926 Crolles Cedex, France

2. Laboratoire de Microélectronique IMS, CNRS UMR 5218, Université Bordeaux, 33405 Talence, France

Abstract

This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate thefT-BVCEOtradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve thefTvalues at high injection levels.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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