Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator
Author:
Affiliation:
1. XLIM-High Frequency Components, Circuits, Signals and System Department (C2S2), Université de Limoges, 7 rue Jules Vallés, 19100 Brive, France
2. III–V Lab, Joint Lab between Bell Labs, TRT and CEA/Leti, Route de Nozay, 91460 Marcoussis, France
Abstract
Funder
French National Research Agency
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://downloads.hindawi.com/journals/apec/2012/796973.pdf
Reference9 articles.
1. Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design
2. Thermal properties of high-power transistors
3. An advanced low-frequency noise model of GaInP-GaAs HBT for accurate prediction of phase noise in oscillators
4. A coplanar 38-GHz SiGe MMIC oscillator
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