On Face Index of Silicon Carbides

Author:

Zhang Xiujun1ORCID,Raza Ali2,Fahad Asfand2ORCID,Jamil Muhammad Kamran3ORCID,Chaudhry Muhammad Anwar4ORCID,Iqbal Zahid45ORCID

Affiliation:

1. School of Information Science and Engineering, Chengdu University, Chengdu 610106, China

2. Department of Mathematics, COMSATS University Islamabad, Vehari Campus, Vehari 61110, Pakistan

3. Department of Mathematics, Riphah Institute of Computing and Applied Sciences, Riphah International University, 14 Ali Road, Lahore, Pakistan

4. Department of Mathematics and Statistics, Institute of Southern Punjab, Multan 66000, Pakistan

5. School of Natural Sciences, National University of Sciences and Technology, Sector H-12, Islamabad, Pakistan

Abstract

Several graph invariants have been defined and studied, which present applications in nanochemistry, computer networks, and other areas of science. One vastly studied class of the graph invariants is the class of the topological indices, which helps in the studies of chemical, biological, and physical properties of a chemical structure. One recently introduced graph invariant is the face index, which can assist in predicting the energy and the boiling points of the certain chemical structures. In this paper, we drive the analytical closed formulas of face index of silicon carbides Si2C3Ia,b, Si2C3IIa,b, Si2C3IIIa,b, and SiC3IIIa,b.

Funder

National Key Research and Development

Publisher

Hindawi Limited

Subject

Modeling and Simulation

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