Affiliation:
1. Department of Physics, Faculty of Girls, Ain Shams University, Heliopolis, Cairo 11757, Egypt
Abstract
A three-valley Monte Carlo simulation approach was used to investigate electron transport in wurtzite GaN such as the drift velocity, the drift mobility, the average electron energy, energy relaxation time, and momentum relaxation time at high electric fields. The simulation accounted for polar optical phonon, acoustic phonon, piezoelectric, intervalley scattering, and Ridley charged impurity scattering model. For the steady-state transport, the drift velocity against electric field showed a negative differential resistance of a peak value of 2.9×105 m/s at a critical electric field strength 180×105 V/m. The electron drift velocity relaxes to the saturation value of 1.5×105 m/s at very high electric fields. The electron velocities against time over wide range of electric fields are reported.
Cited by
11 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献