Emission Mechanisms of Si Nanocrystals and Defects in SiO2Materials

Author:

Rodríguez José Antonio1ORCID,Vásquez-Agustín Marco Antonio2,Morales-Sánchez Alfredo3,Aceves-Mijares Mariano2

Affiliation:

1. Instituto Superior Politécnico de Tecnologia e Ciências (ISPTEC), Avenida Luanda Sul, Rua Lateral Via S10, Talatona, Belas, Luanda, Angola

2. Department of Electronics, INAOE, 72840 Puebla, PUE, Mexico

3. Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, 66600 Apodaca, NL, Mexico

Abstract

Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2is presented.

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Hindawi Limited

Subject

General Materials Science

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