Monte Carlo and hydrodynamic simulation of a one dimensional n+ n n+ silicon diode-Reference-Cited by-同舟云学术

Monte Carlo and hydrodynamic simulation of a one dimensional n+ n n+ silicon diode

Published:1998-01-01 Issue:1-4 Volume:6 Page:247-250
ISSN:1065-514X
Container-title:VLSI Design
language:en
Short-container-title:VLSI Design

Author:

Muscato O.¹,Pidatella R. M.¹,Fischetti M. V.²

Affiliation:

1. Dipartimento di Matematica, Viale Andrea Doria, Catania 95125, Italy

2. lBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA

Abstract

An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n+ - n - n+ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.

Funder

CORIMME

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Link

http://downloads.hindawi.com/archive/1998/098910.pdf

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