Affiliation:
1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
Abstract
The copper telluride thin films were prepared by a coevaporation technique. The single-phase Cu1.4Te thin films could be obtained after annealing, and annealing temperature higher than 220°C could induce the presence of cuprous telluride coexisting phase. Cu1.4Te thin films also demonstrate the high carrier concentration and high reflectance for potential photovoltaic applications from the UV-visible-IR transmittance and reflectance spectra, and Hall measurements. With contacts such as Cu1.4Te and Cu1.4Te/CuTe, cell efficiencies comparable to those with conventional back contacts have been achieved. Temperature cycle tests show that the Cu1.4Te contact buffer has also improved cell stability.
Funder
National Basic Research Program of China
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry
Cited by
11 articles.
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