Affiliation:
1. National Institute of Astrophysics, Optics and Electronics (INAOE), Electronics Department, Laboratory of Innovation in MEMS (LI-MEMS), 72840 Tonantzintla, PUE, Mexico
Abstract
We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), which is a signature of the sensitivity in thermal detectors (microbolometers). Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1). Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs) used in commercial thermal cameras.
Subject
General Materials Science
Cited by
1 articles.
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