Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics
Author:
Affiliation:
1. Source Photonics, 8521 Fallbrook Avenue, Suite 200, West Hills, CA 91304, USA
2. Source Photonics, No. 46, Park Avenue 2nd Rd., Science-Based Industrial Park, Hsinchu, Taiwan
Abstract
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://downloads.hindawi.com/archive/2017/2084621.pdf
Reference18 articles.
1. Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes
2. InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs
3. Dark current reduction in APD with BCB passivation
4. Degradation behavior of avalanche photodiodes with a mesa structure observed using a digital OBIC monitor
5. Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes
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