Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3thin films-Reference-Cited by-同舟云学术

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Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3thin films

Published:2013-12-06 Issue:2 Volume:29 Page:83-89
ISSN:1066-7857
Container-title:Materials Technology
language:en
Short-container-title:Materials Technology

Author:

Prasanna S.,Shaik H.,Mohan Rao G.,Vandana ,Singh P. K.,Jayakumar S.,Balasundaraprabhu R.

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1179/1753555713Y.0000000108

Reference50 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. High dielectric constant gate oxides for metal oxide Si transistors

3. Directed evolution of α-grains in thin metastable-Al2O3 films deposited on Si(100) after post-deposition annealing

4. Kingery W. D., Bowen H. K. and Uhlmann D. R. ‘Introduction to ceramics’, 2nd edn; 1976, New York, John Wiley & Sons.

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2. Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition;Materials Science in Semiconductor Processing;2018-11

3. Modifications of structural, chemical, and electrical characteristics of Er2O3/Si interface under Co-60 gamma irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-03

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