Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts
Author:
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1179/mst.1997.13.11.945
Reference11 articles.
1. Electrical Defects in Silicon Introduced by Sputtering and Sputter‐Etching
2. Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers
3. R.F. sputtered Au-Mo contacts to n-GaAs
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers
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1. Laplace DLTS study of defects introduced in GaAs during sputter deposition of Au Schottky contacts;Materials Science in Semiconductor Processing;2022-12
2. Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC;Materials Science in Semiconductor Processing;2018-07
3. Carburization behavior of AISI 316LN austenitic stainless steel – Experimental studies and modeling;Journal of Nuclear Materials;2010-07
4. Metallisation induced electron traps in epitaxially grown n- type GaN;Materials Science and Engineering: B;2000-02
5. Electrical Characterization of Sputter Deposition Induced Defects in n-GaN;MRS Internet Journal of Nitride Semiconductor Research;1999
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