Annealing effects on self-assembled Ge/Si (100) islands prepared by ion beam sputtering deposition
Author:
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1179/175355511X13240279340840
Reference10 articles.
1. Evolution of strain and composition of Ge islands on Si (001) grown by molecular beam epitaxy during postgrowth annealing
2. Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion
3. Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering deposition
4. Formation of coherent Ge shallow dome islands on Si(001) by ultra-high-vacuum ion beam sputter deposition
5. Evolution of Ge/Si(100) islands: Island size and temperature dependence
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system;Applied Surface Science;2016-11
2. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering;Nanotechnology;2015-10-12
3. Electronic properties of single Ge/Si quantum dot grown by ion beam sputtering deposition;Nanotechnology;2015-02-20
4. Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition;Applied Surface Science;2015-02
5. Coulomb Effects in the Ge/Si Single Quantum Dot;Applied Mechanics and Materials;2013-05
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