Coulomb Effects in the Ge/Si Single Quantum Dot

Abstract

Using scanning probe microscopy (SPM) technique, the electronic properties of Ge/Si quantum dots (QDs) have been characterized. Our results demonstrate that a layer of a disordered structure is formed between the Ge/Si QDs and the surface of Si substrate due to the defects in QDs during the bias voltage applied. That is, a double tunneling system in which the Coulomb blocking effect can be observed is constructed during the electronic measurement for the single quantum dot (SQD).