A Review on the Study of Temperature Effects in the Design of A/D Circuits based on CNTFET-Reference-Cited by-同舟云学术

A Review on the Study of Temperature Effects in the Design of A/D Circuits based on CNTFET

Published:2019-07-19 Issue:5 Volume:15 Page:471-480
ISSN:1573-4137
Container-title:Current Nanoscience
language:en
Short-container-title:CNANO

Author:

Marani Roberto¹,Perri Anna Gina²

Affiliation:

1. Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing, National Research Council (CNR), Rome, Italy

2. Department of Electrical and Information Engineering, Electron Devices Laboratory, Polytechnic University of Bari, Bari, Italy

Abstract

In this paper, we review a procedure to study the effects of temperature in the design of A/D circuits based on CNTFETs. At first, we briefly describe a compact model, already proposed by us, in which the temperature variation in the drain current equation and in energy band gap is considered. Then, the effects of temperature variations in the design of analog circuits, such as a cascode current sink mirror and an Operational Transconductance Amplifier (OTA), and in the design of digital circuits including in particular NAND and NOR logic gates, are illustrated and widely discussed.

Publisher

Bentham Science Publishers Ltd.

Subject

Pharmaceutical Science,Biomedical Engineering,Medicine (miscellaneous),Bioengineering,Biotechnology

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3. Analysis and design of current mode logic based on CNTFET;AIMS Materials Science;2023

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