Abstract
In this review we present many design of CNTFET-based circuits, already proposed by us and here critically examined. For some of these, we compare the performance of proposed circuits both in CNTFET and CMOS technology. For CNTFET model, we use a compact, semi-empirical model, already proposed by us and briefly recalled, while, for the MOSFET model, we use the BSIM4 one of ADS library. Moreover in some design examples we compare our results with those obtained using the Stanford model. All simulations are carried out using the software Advanced Design System (ADS), which is compatible with the Verilog-A programming language.
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献