Latency Variation Aware Read Performance Optimization on 3D High Density NAND Flash Memory
Author:
Affiliation:
1. Ministry of Education & East China Normal University, Shanghai, China
2. City University of Hong Kong, Hong Kong, China
3. East China Normal University, Shanghai, China
Funder
National Natural Science Foundation of China
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3386263.3406953
Reference20 articles.
1. 13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology
2. 13.4 A 512Gb 3-bit/Cell 3D 6th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface
3. 13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology
4. A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology
5. A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput
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