Affiliation:
1. Virginia Commonwealth University
2. Intel Corporation
3. Rensselaer Polytechnic Institute, Troy, NY
Abstract
This article presents a cross-layer codesign approach to reduce SSD read response latency. The key is to cohesively exploit the NAND flash memory device write speed vs. raw storage reliability trade-off at the physical layer and runtime data access workload dynamics at the system level. Leveraging runtime data access workload variation, we can opportunistically slow down NAND flash memory write speed and hence improve NAND flash memory raw storage reliability. This naturally enables an opportunistic use of weaker error correction schemes that can directly reduce SSD read access latency. We develop a disk-level scheduling scheme to effectively smooth the write workload in order to maximize the occurrence of runtime opportunistic NAND flash memory write slowdown. Using 2 bits/cell NAND flash memory with BCH-based error correction correction as a test vehicle, we carry out extensive simulations over various workloads and demonstrate that this developed cross-layer co-design solution can reduce the average SSD read latency by up to 59.4% without sacrificing the write throughput performance.
Funder
Division of Computing and Communication Foundations
Division of Computer and Network Systems
Publisher
Association for Computing Machinery (ACM)
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Cited by
11 articles.
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1. DECC;Proceedings of the 28th Asia and South Pacific Design Automation Conference;2023-01-16
2. Adaptive Differential Wearing for Read Performance Optimization on High-Density NAND Flash Memory;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023
3. Cost‐effectively improving solid state drive lifetime by hierarchical redundancy and heterogeneous memories;Concurrency and Computation: Practice and Experience;2020-10-04
4. SCORE;ACM Transactions on Architecture and Code Optimization;2018-12-31
5. Access Characteristic Guided Read and Write Regulation on Flash Based Storage Systems;IEEE Transactions on Computers;2018-12-01