An In-depth Investigation on the Structure, Characteristics, and Potential Applications of GaN/SiC Mosfet-Based Systems
Author:
Affiliation:
1. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, USA
Publisher
ACM
Link
https://dl.acm.org/doi/pdf/10.1145/3640115.3640134
Reference10 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Dimitrijev S. Han J. Moghadam H. & Aminbeidokhti A. (2015). Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices. MRS Bulletin 40(5) 399-405. doi:10.1557/mrs.2015.89. Available at: https://www.cambridge.org/core/journals/mrs-bulletin/article/powerswitching-applications-beyond-silicon-status-and-future-prospects-of-sic-and-gan-devices/665D48760778E5276DEF11896779B615
3. Cascode GaN/SiC: A Wide-Bandgap Heterogenous Power Device for High-Frequency Applications
4. Efficient Power Conversion Corporation. (n.d.). Why GaN: Benefits of Gallium Nitride. Retrieved July 8, 2023, from https://epc-co.com/epc/gallium-nitride/why-gan
5. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors
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