Capacity-oriented High-performance NV-TCAM Leveraging Hybrid MRAM Scheme

Author:

Zhang Didi1ORCID,Wu Bi1ORCID,Zhu Haonan1ORCID,Liu Weiqiang1ORCID

Affiliation:

1. Nanjing University of Aeronautics and Astronautics (NUAA), N/A, China

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

ACM

Reference20 articles.

1. W. Choi , K. Lee , and J. Park . 2018. Low Cost Ternary Content Addressable Memory Using Adaptive Matchline Discharging Scheme . In Proc.IEEE International Symposium on Circuits and Systems (ISCAS) . Florence, Italy, 1--4. W. Choi, K. Lee, and J. Park. 2018. Low Cost Ternary Content Addressable Memory Using Adaptive Matchline Discharging Scheme. In Proc.IEEE International Symposium on Circuits and Systems (ISCAS). Florence, Italy, 1--4.

2. F. Chen , L. Song and Y. Chen . 2020. PARC: A processing-in-CAM architecture for genomic long read pairwise alignment using ReRAM . In Proc. IEEE Asia and South Pacific Design Automation Conference (ASP-DAC) . Beijing, China, 175--180. F. Chen, L. Song and Y. Chen. 2020. PARC: A processing-in-CAM architecture for genomic long read pairwise alignment using ReRAM. In Proc. IEEE Asia and South Pacific Design Automation Conference (ASP-DAC). Beijing, China, 175--180.

3. Robust High Speed Ternary Magnetic Content Addressable Memory

4. L. Huang , M. Chang , C. Chuang , C. Kuo , C. Chen , G. Yang , H. Tsai , T. Chen , S. Sheu , and L. Su , Keng . 2014 . ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing. (2014), 1--2. L. Huang, M. Chang, C. Chuang, C. Kuo, C. Chen, G. Yang, H. Tsai, T. Chen, S. Sheu, and L. Su, Keng. 2014. ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing. (2014), 1--2.

5. Ferroelectric polymers for non‐volatile memory devices: a review

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