Information Leakage Attacks on Emerging Non-Volatile Memory and Countermeasures-Reference-Cited by-同舟云学术

Information Leakage Attacks on Emerging Non-Volatile Memory and Countermeasures

Published:2018-07-23 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the International Symposium on Low Power Electronics and Design
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Author:

Khan Mohammad Nasim Imtiaz¹,Ghosh Swaroop¹

Affiliation:

1. School of Electrical Engineering and Computer Science, The Pennsylvania State University, Pennsylvania

Funder

National Science Foundation

DARPA Young Faculty Award

Semiconductor Research Corporation

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3218603.3218649

Reference24 articles.

1. A. Nigam C. W. Smullen V. Mohan E. Chen S. Gurumurthi and M. R. Stan "Delivering on the promise of universal memory for spin-transfer torque ram (STT-RAM) " in IEEE/ACM International Symposium on Low Power Electronics and Design pp. 121--126 Aug 2011. A. Nigam C. W. Smullen V. Mohan E. Chen S. Gurumurthi and M. R. Stan "Delivering on the promise of universal memory for spin-transfer torque ram (STT-RAM) " in IEEE/ACM International Symposium on Low Power Electronics and Design pp. 121--126 Aug 2011.

2. D. C. Worledge G. Hu P. L. Trouilloud D. W. Abraham S. Brown M. C. Gaidis J. Nowak E. J. O'Sullivan R. P. Robertazzi J. Z. Sun and W. J. Gallagher "Switching distributions and write reliability of perpendicular spin torque MRAM " in 2010 International Electron Devices Meeting pp. 12.5.1--12.5.4 Dec 2010. D. C. Worledge G. Hu P. L. Trouilloud D. W. Abraham S. Brown M. C. Gaidis J. Nowak E. J. O'Sullivan R. P. Robertazzi J. Z. Sun and W. J. Gallagher "Switching distributions and write reliability of perpendicular spin torque MRAM " in 2010 International Electron Devices Meeting pp. 12.5.1--12.5.4 Dec 2010.

3. Y. Wu S. Yu X. Guan and H. S. P. Wong "Recent progress of resistive switching random access memory (RRAM) " in 2012 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 1--4 June 2012. Y. Wu S. Yu X. Guan and H. S. P. Wong "Recent progress of resistive switching random access memory (RRAM) " in 2012 IEEE Silicon Nanoelectronics Workshop (SNW) pp. 1--4 June 2012.

4. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

5. Y. M. Kang and S. Y. Lee "The challenges and directions for the mass-production of highly-reliable high-density 1T1C FRAM " in 2008 17th IEEE International Symposium on the Applications of Ferroelectrics vol. 1 pp. 1--2 Feb 2008. Y. M. Kang and S. Y. Lee "The challenges and directions for the mass-production of highly-reliable high-density 1T1C FRAM " in 2008 17th IEEE International Symposium on the Applications of Ferroelectrics vol. 1 pp. 1--2 Feb 2008.

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