Author:
Zhao W. S.,Aziza H.,Deleruyelle D.,Muller C.,Zhang Y.,Klein J. O.,Querlioz D.,Chabi D.,Ravelosona D.,Chappert C.,Portal J. M.,Bocquet M.
Reference33 articles.
1. N. S. Kim et al., "Leakage current: Moore's law meets the static power", Computer, vol. 36, pp. 68--75, December 2003.
2. International Roadmap for semiconductor (ITRS), 2011 ERD Update.
3. C. Chappert, A. Fert and F. Nguyen Van Dau, "The emergence of spin electronics in data storage", Nat Mater, vol. 6, pp. 813--823, 2007.
4. M. Kund et al., "Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20 nm"IEDM Tech. Dig. pp. 754--757, 2005.
5. I. G. Baek et al., "Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application",Procs. of IEEE IEDM, pp. 750--753, December 2005.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献